| PART |
Description |
Maker |
| JDP2S01E07 JDP2S01E |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV17207 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S04E |
VHF~UHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| JDP4P02U07 JDP4P02U |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV312 |
DIODE (VHF~UHF BAND RF ATTENUATOR APPLICATIONS)
|
Toshiba Semiconductor
|
| JDP2S01E JDP2501E |
SILICON, PIN DIODE
UHF~VHF BAND RF ATTENUATOR APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| TC2202F TG2202F E007577 |
1.9 GHz BAND ATTENUATOR (PHS DIGITAL CORDLESS TELEPHONE)
From old datasheet system
|
Toshiba
|
| 1SV128 |
VHF锝?HF Band RF Attenuator Applications
Small Total Capacitance : CT = 0.25 pF(Typ.) Reverse Vo ltage VR 50V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 3-28-109 3-05-109 3-10-109 3-08-109 3-04-109 3-03- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Fixed Attenuators 18325 GHz 固定衰减18325千兆
33000 MHz - 50000 MHz RF/MICROWAVE FIXED ATTENUATOR
40000 MHz - 60000 MHz RF/MICROWAVE FIXED ATTENUATOR
18000 MHz - 26500 MHz RF/MICROWAVE FIXED ATTENUATOR
220000 MHz - 325000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
TE Connectivity, Ltd.
|
| S3P72H8 |
The S3C72H8 single-chip CMOS microcontroller has been designed for very high performance using Samsungs state-of-the-art 4-bit product development app
|
http://
|
| S3P72H8 S3C72H8 |
The S3C72H8 single-chip CMOS microcontroller has been designed for very high performance using Samsungs state-of-the-art 4-bit product development app
|
SAMSUNG[Samsung semiconductor]
|
